Skip to main content

Full text of "Signal height in silicon pixel detectors irradiated with pions and protons"

See other formats


Signal height in silicon pixel detectors irradiated with pions and 

protons 

T. Rohe^ 1 , J. Acosta b , A. Bean c S. Dambach a,d W. Erdmann a , U. Langenegger d , 
C. Martin c , B. Meier a , V.Radicci c , J.Sibille c , P.Triib a ' d 

a Paul Scherrer Institut, Villigen, Switzerland 
b University of Puerto Rico, Mayagiiez 
c University of Kansas, Lawrence KS, USA 
d ETH Zurich, Switzerland 



Abstract 

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) 
and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists 
mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences 
expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to 
which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size 
of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 
6 x 10 14 n eq /cm 2 at PSI and with protons up to 5 x 10 15 n eq /cm 2 . The sensors were taken from production wafers 
of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7k£2cm and an 
n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was 
investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. 
The bias dependence of the signal for a wide range of fluences will be presented. 
Key words: LHC, super LHC, CMS, tracking, pixel, silicon, radiation hardness 



1. Introduction 

The tracker of the CMS experiment consists of 
only silicon detectors [1]. The region with a dis- 
tance to the beam pipe between 22 and 115 cm is 
equipped with 10 layers of single sided silicon strip 
detectors covering an area of almost 200 m 2 with 
about 10 7 readout channels. The smaller radii are 
equipped with a pixel detector which was inserted 
into CMS in August 2008. It consists of three bar- 



Corresponding author; e-mail: Tilman.Rohe@cern.ch 



rel layers and two end disks at each side. The bar- 
rels are 53 cm long and placed at radii of 4.4 cm, 
7.3 cm, and 10.2 cm. They cover an area of about 
0.8 m 2 with roughly 800 modules. The end disks 
are located at a mean distance from the interac- 
tion point of 34.5 cm and 46.5 cm. The area of the 
96 turbine blade shaped modules in the disks sums 
up to about 0.28m 2 . The pixel detector contains 
about 6 x 10 7 readout channels providing three pre- 
cision space points up to a pseudo rapidity of 2.1. 
These unambiguous space points allow an effective 
pattern recognition in the dens track environment 



Preprint submitted to Elsevier Science 



22 January 2009 



close to the LHC interaction point. The precision 
of the measurement is used to identify displaced 
vertices for the tagging of b-jets and r-leptons. 

The two main challenges for the design of the 
pixel detector are the high track rate and the high 
level of radiation. The former concerns the archi- 
tecture of the readout electronics while the high 
radiation level mainly affects the charge collection 
properties of the sensor, which degrades steadily. 

A possible luminosity upgrade of LHC is cur- 
rently being discussed. With a minor hardware up- 
grade a luminosity above 10 cm s might be 
reached. Later major investments will aim for a 
luminosity of 10 cm s [2]. The inner regions 
of the tracker will have to face an unprecedented 
track rate and radiation level. The detectors placed 
at a radius of 4 cm have to withstand the presently 
unreached particle ffuence of <& « 10 16 n eq /cm 2 or 
must be replaced frequently However, the opera- 
tion limit of the present type hybrid pixel system 
using "standard" n-in-n pixel sensors is not yet 
seriously tested. The aim of the study presented 
is to test the charge collection of the CMS bar- 
rel pixel system at fluences exceeding the specified 
6 x 10 14 n cq /cm 2 [3]. 



2. Sensor samples 

The sensors for the CMS pixel barrel follow the 
so called "n-in-n" approach. The collection of elec- 
trons is of advantage in a highly radiative envi- 
ronment as they have a higher mobility than holes 
and therefore suffer less from trapping. Further- 
more, the highest electric field after irradiation in- 
duced space charge sign inversion is located close 
to the collecting n-electrodes. The need of a dou- 
ble sided processing leading to a significant price 
increase compared to truly single sided p-in-n sen- 
sors is used as a chance to implement a guard ring 
scheme keeping all sensor edges on ground poten- 
tial. This feature simplifies the design of the detec- 
tor modules considerably. For n-side isolation the 
so called moderated p-spray technique [4] has been 
chosen and a punch through biasing grid has been 
implemented. 

The sensor samples were taken from wafers of 



the main production run for the CMS pixel bar- 
rel which were processed on n-doped DOFZ silicon 
according to the recommendation of the ROSE- 
collaboration [5] . The resistance of material prior 
to irradiation was 3.7ki2cm. The approximately 
285 Um thick sensors had the size of a single read- 
out chip and contain 52 x 80 pixels with a size of 
150 x 100 |im 2 each. In contrast to previous studies 
[6] the standard bump bond and flip chip procedure 
described in [7] was applied to the samples. As this 
includes processing steps at elevated temperature, 
this was done before irradiation which simplified 
the whole procedure considerably and resulted in 
a very good bump yield. In return it means that 
the readout chips were also irradiated. Although 
the operation of irradiated readout circuits poses 
a major challenge and source of measurement er- 
rors, it gives a realistic picture of the situation in 
CMS after a few years of running. 

The sandwiches of sensor and readout chip were 
irradiated at the PSI-PiEl-beam line with positive 
pions of momentum 280MeV/c to fluences up to 
6 x 10 14 n oq /cm 2 and with 26GeV/c protons at 
CERN-PS up to 5 x 10 15 n cq /cm 2 . 

All irradiated samples were kept in a commercial 
freezer at — 18° C after irradiation. However the 
pion irradiated ones were accidentally warmed up 
to room temperature for a period of a few weeks 
(due to an undetected power failure). 



3. Measurement Procedure 

The aim of the study was to determine the 
amount of a signal caused by minimum ionising 
particle (m.i.p.) as a function of sensor bias and ir- 
radiation ffuence. For this the response of the sam- 
ples to a Sr-90 source was investigated. The end- 
point energy of the beta particles is about 2.3 MeV 
which approximates a m.i.p. well. However there is 
also a large number of "low energy" particles which 
are stopped in the sensor and cause much larger 
signals. Those have to be filtered during the data 
analysis. 

The samples were mounted on a water cooled 
Peltier element and kept at — 10° C. The source was 
placed inside the box about 10 mm above the sen- 



2 



sor. As the compact setup did not allow the imple- 
mentation of a scintillator trigger a so called ran- 
dom trigger was used. In this method the FPGA 
generating all control signals for the readout chip 
stretches an arbitrary cycle of the clock sent to the 
readout chip by a large factor, and, after the la- 
tency, sends a trigger to read out the data from this 
stretched clock cycle. The stretching factor was ad- 
justed in a way that about 80% of the triggers 
showed hit pixels. 

A measurement sequence consists of the follow- 
ing steps: 

- Cool down the sample while flushing the box 
with dry nitrogen. 

- The "pretest" adjusts basic parameters of the 
readout chip. 

- The "full test" checks the functionality of each 
pixel. 

Fine tune the threshold in each pixel to a value 
of 4000 electrons as uniform as possible ( "trim" 
the chip). 

- The pulse height calibration relates for each 
pixel the pulse height to the DAC values used to 
inject test pulses. The analogue response is fit- 
ted to an hyperbolic arc-tangent function [8] and 
the four fit parameters are calculated for each 
pixel. With procedure an absolute calibration of 
each pixel is possible. 

This procedure was identical to what is used to test 
and calibrate the modules installed in the CMS ex- 
periment. It was perfectly adequate for all samples 
up to a fluence of 1 x 10 15 n cq /cm 2 . 

For the samples irradiated to 2.8 x 10 15 n eq /cm 2 
the feedback resistor of the preamplifier and shaper 
had to be adjusted manually to compensate for 
the radiation induced change of the transistor's 
transconductance. The DAC which controls this 
setting is not implemented in the testing software. 
Then the standard calibration procedure was used 
with the exception that the pixel threshold was 
lowered to about 2000 electrons (instead of 4000). 
An additional feature of the readout chip, the leak- 
age current compensation, which might be useful 
for such highly irradiated samples, was not used. 

The readout chips of the samples irradiated to 
5 x 10 15 n eq /cm 2 showed some functionality, how- 
ever a calibration and quantitative analysis of the 
data was not yet possible and will be the subject 



of further investigations. 

After these steps data is taken using the Sr-90 
source. The sensor bias was varied over a wide 
range. The maximum voltage applied was 250 V 
for the unirradiated samples, 600 V for the sam- 
ples irradiated up to 1 x 10 15 n eq /cm 2 , and 1100 V 
for the samples which received a fluence of 2.8 x 
10 15 n eq /cm 2 . The change of the sensor bias has 
no effect on the calibration performed before. The 
temperature can be kept stable during the bias 
scan within 0.2° C. The effect of such small temper- 
ature variations has been tested to be negligible. 

The data was analysed off line. First all analogue 
pulse height information were converted into an ab- 
solute charge value, using the parametrisation de- 
scribed above. After this a pixel mask is generated 
which excludes faulty pixels. A pixel was masked 
if it shows much less ("dead") or more ("noisy") 
hits than its neighbours, and if the pulse height cal- 
ibration failed. In addition a manually generated 
list of pixels can be excluded. In a second step all 
clusters of hit pixels are reconstructed. If a cluster 
touches a masked pixel or the sensor edge, it is ex- 
cluded from further analysis. Clusters of different 
size (one pixel, two pixels, etc.) are processed sep- 
arately. To measure the pulse height, the charge of 
a cluster is summed and histogrammed. To those 
histograms a Landau function convoluted with a 
Gaussian is fitted. The quoted charge value is the 
most probable value (MPV) of the Landau. 

Due to the low threshold of only 2000 electrons 
the highly irradiated samples (2.8 x 10 15 n eq /cm 2 ) 
showed a higher number of noisy pixels, especially 
at the sensor edge where the pixels are larger. How- 
ever, also some "good " pixels showed a certain 
number of noise hits which lead to a second peak 
in the pulse height spectra. It was well separated 
from the signal for voltages above 200 V. The ori- 
gin of the 2 peaks could easily be distinguished: 
The signal peak moves with higher bias to higher 
values while the noise peak stays at the same po- 
sition but becomes more prominent (more noise 
hits at higher bias). 

- The spatial distribution of the signal shows the 
intensity profile of the source, while the noise 
hits are randomly distributed. 

- The signal peak has a typical Landau shape, 
while the noise peak is more Gaussian. 



3 



Not irradiated, 150V 
6.1E14, 600V 
1.1 E15, 600V 
2.8E15, 800V 




Fig. 1. Distribution of cluster size for four irradiation fiu- 
ences. 




200 400 600 800 1000 1200 1400 1600 1800 2000 

Signal Height [a.u.] 



Fig. 2. Pulse height distribution of an unirradiated sensor 
in arbitrary units (1 unit is about 65 electrons). 

The quoted signal is again the MPV of a convoluted 
Landau-Gauss fit. 



4. Results 

Because the radiation of the Sr-90 source con- 
tains a large graction of low energy betas which 
cause much higher signal than a minimum ionising 
particle and as the setup was not equipped with a 
scintillator which triggered only if a particle pen- 
etrated the sample, the contamination of the low 
energy particles had to be reduced using the of- 
fline analysis. A particle stopped in the sensor usu- 
ally causes part of the ionised electrons to travel 
in the plane of the sensor ionising further electrons 
in the flight path. This results in large clusters of 



hit pixels. Figure 1 shows the distribution of the 
cluster size for four irradiation fluences. Naively 
one would expect a spectrum dominated by one- hit 
clusters with a small fraction of clusters of size two 
to four caused by particles passing just in-between 
two pixels or close to a pixel corner. However, as 
visible in Fig. 1, there is a tail of events with ex- 
tremely large clusters, which does not dependent 
on irradiation or bias voltage. This supports the 
hypothesis of secondary particles. Therefore it is 
not surprising that the signal is a function of the 
cluster sizes. Figure 2 shows the pulse height distri- 
bution of an unirradiated sensor for different clus- 
ter sizes. In particular clusters with more than 4 
hit pixels tend to have very large signals and their 
distribution can no longer be described by a Lan- 
dau function. More surprising is the fact that al- 
ready in small clusters with less than four pixels 
the most probable value of the pulse height distri- 
bution clearly depends on the cluster size. In order 
to reduce a contamination of the data from low en- 
ergy particles, the pulse height is only extracted 
from clusters of size one. 

Figure 3 shows the bias dependence of the sig- 
nal for all measured samples. For the unirradiated 
samples the sudden rise of the signal at the full de- 
pletion voltage of Vdopi ~ 55 V is nicely visible. The 
signal then saturates very fast. The samples irra- 
diated to fluences in the 10 14 n eq /cm 2 -range also 
show a nice saturation of the signal above roughly 
300 V. The onset of the signal in the "low" volt- 
age range clearly displays the increase of the space 
charge due to radiation. There is a strong variation 
of the saturated signal for samples with the same 
irradiation fluence which cannot be explained with 
differences in the sensor thickness. The reason for 
this is probably the imperfection of the pulse height 
calibration, which relies on the assumption that 
the injection mechanism for test pulses is equal for 
all readout chips, which is not the case. Variations 
of the injection capacitor are larger than 15 %, and 
also the resistor network in the DAC shows vari- 
ations, which are, however, much smaller. For the 
samples irradiated to fluences above 10 15 n eq /cm 2 , 
no saturation of the signal with increasing bias 
is visible. It is remarkable that even after a flu- 
ence of 2.8 x 10 15 n eq /cm 2 a charge of more than 
10000 electrons can be achieved if it is possible 



4 




Fig. 3. Signal from single pixel clusters as a function of the sensor bias. Each line represents one sample. 



• 


Not irradiated, 250V 


A 


Pions, 600V 


o 


Protons, 600V 


A 


Protons, 800V 


<S 


Protons, 1 000V 






5 10 15 20 25, 30 

<t[10 n /cm 2 ] 



In order to display the development of the signal 
height as a function of the fiuence, the charge at 
600 V was extracted for each sample (250 V for the 
unirradiated ones) and plotted in Fig. 4. In addi- 
tion the values for 800 V and 1000 V are plotted for 
the highest fiuence. Apart from the large fluctua- 
tions, which are due to the calibration of the read- 
out electronics, the reduction of the charge with 
fiuence is nicely visible. Further it becomes obvi- 
ous that it pays to go to very high bias voltages if 
the fluences exceeds 10 15 n cq /cm 2 . 



Fig. 4. Most probable signal as a function of the irradiation 
fluencc. Each point represents one sample (apart from the 
highest fiuence where each of the two samples is shown at 
three bias voltages). 

to apply a bias voltage above 800 V. This nicely 
complements the results for n-in-p strip detectors 
shown in this conference [9,10]. 



5. Conclusion 

In order to estimate the survivability of the 
present CMS barrel pixel detector in a harsh radi- 
ation environment, single chip detectors (sensors 
bump bonded to a readout chip) have been irradi- 



5 



ated to fluences up to 5 x 10 15 n cq /cm 2 and tested 
with a Sr-90 source. The samples that received 
fluences up to about 10 15 n cq /cm 2 could be used 
without any modification of the chip calibration 
procedure and obtained a signal charge of above 
10 000 electrons at a bias voltage of 600 V. From 
this point of view their performance is perfectly 
adequate for the CMS experiment, even at fluences 
twice as high as the 6 x 10 14 n eq /cm 2 specified in 
the Technical design report [3] . The samples irradi- 
ated to 2.8 x 10 15 n eq /cm 2 could be operated with 
slightly adjusted chip settings and also showed a 
signal of about 10 000 electrons, however at a bias 
voltage of 1000 V. This indicates the suitability of 
such devices for a use at an upgraded LHC. The 
samples which received 5 x 10 15 n oq /cm 2 could not 
yet be operated. Their examination is subject of 
further studies. 



Acknowledgement 

The pion irradiation at PSI would not have been 
possible without the beam line support by Dieter 
Renker and Konrad Deiters, PSI, the logistics pro- 
vided by Maurice Glaser, CERN, and the great ef- 
fort of Christopher Bctancourt and Mark Gerling, 
UC Santa Cruz (both were supported by a finan- 
cial contribution of RD50 and PSI). 

The proton irradiation was carried out at the 
CERN irradiation facility. The authors would like 
to thank Maurice Glaser and the CERN team for 
the outstanding service. 

The work of J. Acosta, A. Bean, C. Martin, 
V. Radicci and J. Sibille is supported by the PIRE 
grant OISE-0730173 of the US-NSF. 

The work of S. Dambach, U. Langenegger, and 
P. Triib is supported by the Swiss National Science 
Foundation (SNF). 

The sensors were produced by CiS GmbH in Er- 
furt, Germany 



[1] The CMS Collaboration, The CMS experiment at the 
CERN LHC, Journal of Instrumentation 3 S08004 
(2008) 26-89, http://www.iop.org/EJ/journal/- 
pagc=extra. lhc/j inst . 

[2] EP-TH faculty meeting, CERN, 17.01.2001. 

[3] The CMS Collaboration, CMS Tracker, Technical 
Design Report LHCC 98-6, CERN, Geneva, 
Switzerland (1998). 

[4] J. Kcmmer, et al., Strcifcndctektor, 
Patentoffenlegungsschrift DE 19620081 Al. 

[5] G. Lindstrom, et al., Radiation hard silicon detectors 
- developments by the RD48 (ROSE) collaboration, 
Nucl. Instrum. Methods A 466 (2001) 308-326. 

[6] Y. Allkofcr, et al., Design and performance of the 
silicon sensors for the cms barrel pixel detector, Nucl. 
Instrum. Methods A 584 (2008) 25 - 41. 

[7] C. Bronnimann, ct al., Development of an indium 
bump bond process for silicon pixel detectors at PSI, 
Nucl. Instrum. Methods A 565 (2006) 303-308. 

[8] S. Dambach, CMS pixel module readout optimization 
and study of the Bo lifetime in the semileptonic decay 
mode, Ph.D. thesis, ETH Zurich, Switzerland, ETH 
Diss. No. 18203 (2009). 

[9] A. Affolder, P. Airport, G. Cassc, Studies of charge 
collection efficiencies for p-typc planar silicon detectors 
after thermal neutron and 24 MeV proton doses up to 
2 X 10 16 n eq /cm 2 , these proceedings. 

[10] I. Mandic, V. Cindro, G. Kramberger, M. Mikuz, 
Observation of full charge collection efficiency in p+n 
strip detectors irradiated up to 3 X 10 16 n eq /cm 2 , these 
proceedings. 



References 



G 



This figure "clusterSize.jpg" is available in "jpg" format from: 



http://arXiv.org/ps/0901 .3422vl 



This figure "spectrum.jpg" is available in "jpg" format from: 



http://arXiv.org/ps/0901 .3422vl